Teledyne e2v HiRel Electronics (HiRel) offers GaN Systems and Peregrine RF power solutions dedicated to hi-rel applications. The leading edge Galium Nitride technology in GaN Systems’ solutions enable high power density designs with four times less space requirements. The Peregrine RF based POL products combine outstanding radiation performance with high levels of integration and easy to use features.
Ruggedized 100V HEMT Adds to e2v HiRel’s GaN Power HEMT Family – This new product, TDG100E90, joins the recently announced 650V, 60A TDG650E60, and is available to provide a lower step-down voltage in high-reliability power circuitry. Compared to Silicon MOSFET devices, the GaN-based TDG100E90 HEMT significantly reduces losses and EMI, due to no reverse recovery characteristics. To reduce drain-source on-resistance (RDS(on)) or increase the load current, the TDG100E90 can easily support parallel driving configuration. The use of high-performance GaNPX® packaging allows very high-frequency switching, extremely low inductance, and excellent thermal characteristics, enabling customers to significantly reduce the size and weight of power electronics. Download the TDG100E90BEP Data Sheet >
Ruggedized, High Reliability 650V GaN Power HEMT – The new TDG650E60 is the highest voltage GaN power device available on the market for space and military applications. It is now available with both top- or bottom-side cooled options. It delivers the efficiency, size, and power density-benefits required in those critical high-rel applications. The TDG650E60 boasts an extremely small form factor and leverages the patented Island Technology® from GaN Systems. It is a scalable, vertical charge dissipating system that gives the power transistor ultra-low thermal losses, high power density, no-charge storage, and very high switching speeds, and has been tested and qualified under the industry’s most stringent testing regimen. Download the TDG650E60 Data Sheet >