Power Solutions

e2v HIREL ELECTRONICS

Semiconductors

Teledyne e2v HiRel Electronics (HiRel) offers GaN Systems and Peregrine RF power solutions dedicated to hi-rel applications. The leading edge Galium Nitride technology in GaN Systems’ solutions enable high power density designs with four times less space requirements. The Peregrine RF based POL products combine outstanding radiation performance with high levels of integration and easy to use features.

New Product

TD5 Series High Reliability 10A DC-DC POL Module – The TD5 series of high reliability DC-DC converter point-of-load module with all passive components integrated, requiring no external capacitors or inductors. It includes under voltage lockout, cycle-by-cycle current limit protection, and thermal shutdown. The TD5 uses a space flight-proven, monolithic DC-DC Controller, which has intrinsic radiation tolerance. The module is packaged in a hermetic 16-lead Ceramic Flat Pack package.

TD5 Data Sheet ›

Design Tools

Tool	Description	Applicable product/s
EVK (ES proto)	TD99101-x00 half-bridge driver with both the high side and low side GaN Fet gate drivers	TD99101 & TDG100Exx
White paper	GaN Power for low-temp and space applications	GaN Systems' solutions
White paper	Hydrogen Poisoning Mitigation in GaN Systems HEMT Devices	GaN Systems' solutions

GaN Drivers

Device	Description	Status
TD99101D-AS	Prototype of GaN Driver Die	Preview
TD99101P-AS	Prototype of GaN Driver Packaged device	Preview
TD99101-x00	Half-bridge driver with both the high side and low side GaN Fet gate drivers	Available (ES pr

GaN Fets

Device	Status	Package	Voltage	Current	Rds (ON)	Dims,	Description
TDG100E30BSDX	Samples	Ceramic SMD 0.5	100V	30A	19mOhm (Typ)	10.16 X 7.54 X 3.15mm	Final prototype of Enhancement Mode GaN FET in SMD 0.5 Ceramic Package
TDG100E15BSDX	Samples	Ceramic SMD 0.6	100V	15A	19mOhm (Typ)	10.16 X 7.54 X 3.16mm	Final prototype of Enhancement Mode GaN FET in SMD 0.5 Ceramic Package
TD99101-x00	Available	Flip Chip Die 16p CLGA	100V HSS to LSS	1A/2A	N/A	2040 x 1640 μm	ES (Proto) EVK: Half-bridge driver with both the high side and low side GaN Fet gate drivers
TDG100E45BEPX	Samples	GaNPX™	100V	45A	15mOhm (Typ)	4.6 X 4.4 X 0.51mm	Ruggedized Plastic Enhancement Mode GaN FET in GaNPX® Packaging
TDG100E90BEPX	Samples	GaNPX™	100V	90A	7mOhm (Typ)	7.6 X 4.6 X 0.51mm	Ruggedized Plastic Enhancement Mode GaN FET in GaNPX® Packaging
TDG100E90D1X	Active	Die	100V	90A	7mOhm (Typ)	5.4 X 2.0 X 0.256mm	Enhancement Mode GaN FET Die With NiAu/Ag Finish
TDG100E90D2X	Active	Die	100V	90A	7mOhm (Typ)	5.4 X 2.0 X 0.262mm	Enhancement Mode GaN FET Die With Cu/Cu Finish
TDG100E90D3X	Active	Die	100V	90A	7mOhm (Typ)	5.4 X 2.0 X 0.259mm	Enhancement Mode GaN FET Die With Cu/Ag Finish
TDG650E7BEPX	Samples	GaNPX™	650V	7A	200mOhm	5.0 X 6.6 X 0.51mm	Ruggedized Plastic Enhancement Mode GaN FET in GaNPX® Packaging
TDG650E60BEPX	Samples	GaNPX™	650V	60A	25mOhm	11.0 X 9.0 X 0.51mm	Ruggedized Plastic Enhancement Mode GaN FET in GaNPX® Packaging
TDG650E30D1X	Active	Die	650V	30A	50mOhm	5.86 X 2.17 X 0.256mm	Enhancement Mode GaN FET Die With NiAu/Ag Finish
TDG650E30D2X	Ative	Die	650V	30A	50mOhm	5.86 X 2.17 X 0.262mm	Enhancement Mode GaN FET Die With Cu/Cu Finish
TDG650E30D3X	Active	Die	650V	30A	50mOhm	5.86 X 2.17 X 0.259mm	Enhancement Mode GaN FET Die With Cu/Ag Finish

POLs

Product	Type	Desc.	Vin(V) Min	Vin(V) Max	Vout (V) Min	Vout (V) Max	Max Iout (A)	Async Swtch Freq (kHz) Min	Async Swtch Freq (kHz) Max	Sync Swtch Freq (kHz) Min	Sync Swtch Freq (kHz) Max	Pkg.	Package (mm)	Hi-Rel
PE99151	POL Buck Regulators	Excellent Power Efficiency	4.6	6.0	1.0	3.6	2.0	500.0	1000.0	100.0	5000.0	32L CQFP, DIE	12.57x13.08	Yes
PE99153	POL Buck Regulators	Excellent Power Efficiency	4.6	6.0	1.0	3.6	6.0	500.0	1000.0	100.0	5000.0	32L CQFP, DIE	12.57x13.08	Yes
PE99155	POL Buck Regulators	Excellent Power Efficiency	4.6	6.0	1.0	3.6	10.0	500.0	1000.0	100.0	5000.0	32L CQFP, DIE	12.57x13.08	Yes
TD5 Series High Reliability 10A DC-DC POL Module			4.6	6.0	1.0	3.6	10.0	500.0						Yes

Peregrine’s power management products follow a steep tradition of high performance and efficiency. The flagship power management family supports DC to DC conversion with radiation-tolerant point-of-load (POL) synchronous buck regulators with integrated switches. These devices offer SEE immunity to a linear energy transfer (LET) greater than 90 MeV.cm2/mg and TID of 100 kRad(Si). By offering superior performance, smaller size and reduced weight, these power management products can replace multi-chip modules in sensitive space applications.

DC-DC converters from Peregrine are the industry’s smallest, space-grade, monolithic non-isolated distributed power solutions. They can replace traditional multi-chip modules that power field-programmable gate array (FPGA), digital signal processor (DSP), ASIC and SRAM power management designs. The combination of small size, high levels of integration and efficiency lowers total system weight and associated costs. Peregrine’s converters are designed to operate from a wide bus rail and provide an output voltage supply rails for analog, digital and RF payloads while delivering continuous output current. The converters also achieve high peak efficiency of 93+ percent through monolithic integration that reduces switch loss. The components feature an external resistor that provides adjustable slope compensation to optimize closed-loop bandwidth across output voltage and switching frequency range.

Peregrine’s DC-DC converters are radiation-hardened and immune from single event latch-ups (SELs), making them ideal for space applications. They are also optimized for defense and commercial applications, such as satellite systems, military radios, radar, engine control modules (ECMs), down-hole drilling and other high-reliability systems.

Power News

Teledyne e2v and GaN Systems global alliance extends the power of GaN to Aerospace and Defense industries – Full story here.

Teledyne e2v and Peregrine Semiconductor introduce ultra-low phase noise FRAC-N Phase-Locked Loop (PLL) for commercial space applications – Full story here.