Family of 650 V GaN HEMTs Expands with 15 A and 30 A Versions – Two new ruggedized, high power GaN HEMTs,
TDG650E15BEP, were recently announced to augment our expanding GaN Power line. The HEMTs (High Electron Mobility Transistor) deliver lower current performance of 30- and 15-amp respectively, while the original 650 V introduced last year, the TDG650E60, delivers 60 A. Both are in smaller packages allowing for higher circuit packing density. The 650 V family is the highest voltage GaN power device suite today for high-rel military, avionics, and space applications, particularly power supply, motor control, half bridge topologies, and solar and wind power.
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Ruggedized, High Reliability Isolated Gate Drivers for 650V GaN Power HEMTs
The TDGD27x isolators are ideal for driving GaN power parts used in a wide variety of power supply and motor control applications. The TDGD27x isolated gate drivers utilize silicon isolation technology, supporting up to 2.5 kVRMS. This technology enables industry leading common-mode transient immunity (CMTI), tight timing specifications, reduced variation with temperature and age, better part-to-part matching, and extremely high reliability. Download the TDGD27x Data Sheet >
Teledyne e2v HiRel and Silicon Labs Announce Partnership
Teledyne e2v HiRel and Silicon Labs (SL) are partnering to offer SL’s high reliability isolation technology as part of Teledyne’s new family of gate drivers, with an initial focus on satcom power systems. The Teledyne product line is ideal for GaN applications due to their faster switch rates and provide options for either a single driver or a combination of two 4 A isolated drivers in a single IC package for isolated gate drive applications. Read the press release.