The evolution of new technologies, such as wide-bandgap semiconductors (WBGs) is paving the way for smaller, faster, and more efficient power management solutions. GaN transistors are enabling applications that favor solutions offering reduced physical size, weight, and cost.
One of the distinguishing features of GaN transistors is their ability to operate at much higher frequencies than silicon metal-oxide semiconductor field-effect transistors (Si MOSFETs), due to their smaller capacitance andlower on-resistance. Higher switching frequency offers the benefits of smaller magnetics. Increasing the switching frequency requires a driver with lower propagation delay, accurate matching between channels, and minimum parasitic inductance.
The Teledyne GaN drivers boasts the industry’s fastest rise times and a low minimum pulse width. These high-speed drivers enable design engineers to extract the full performance and switching speed advantages from GaN transistors.