GaN Drivers
The evolution
of new technologies, such as wide-bandgap semiconductors (WBGs) is paving the
way fors maller,
faster, and more efficient power management solutions. GaN transistors are
enabling applications that favor
solutions offering reduced physical size, weight, and cost.
One of the
distinguishing features of GaN transistors is their ability to operate at much
higher frequencies than silicon
metal-oxide semiconductor field-effect transistors (Si MOSFETs), due to their
smaller capacitance andlower
on-resistance. Higher switching frequency offers the benefits of smaller
magnetics. Increasing the switching
frequency requires a driver with lower propagation delay, accurate matching
between channels, and minimum parasitic
inductance.
The Teledyne
GaN drivers boasts the industry’s fastest rise times and a low minimum pulse
width. These high-speed drivers enable design engineers to extract the full
performance and switching speed advantages from GaN transistors.