​Military & Space


 

GaN HEMTs

Gallium nitride devices have revolutionized power conversion in other industries and are now available in high reliability qualified form with plastic encapsulated packaging that has undergone stringent reliability and electrical testing to ensure mission critical success. The Teledyne HiRel GaN HEMT technology provides the efficiency, size, and power-density benefits required in critical aerospace and defense power applications.

New Products

New 60 A 650 V Space Screened Parts - Two new parts are available, both space-grade, 650 V, enhancement mode, top-side cooled GaN-on-Silicon power transistors. The properties of GaN allow for high current, high voltage breakdown and high switching frequency, enabling high efficiency and high power density designs. The two models are:

  • TDG650E601TSP Space GaN E-mode Transistor with 900 V transient drain-to-source maximum voltage
  • TDG650E602TSP​ Space GaN E-mode Transistor with 750 V transient drain-to-source maximum voltage
    Each is available with options for EAR99 or European sourcing.​

Family of 650 V GaN HEMTs Expands with 15 A and 30 A Versions – Two new ruggedized, high power GaN HEMTs, TDG650E30BEP and TDG650E15BEP, were recently announced to augment our expanding GaN Power line. The HEMTs (High Electron Mobility Transistor) deliver lower current performance of 30- and 15-amp respectively, while the original 650 V introduced last year, the TDG650E60, delivers 60 A. Both are in smaller packages allowing for higher circuit packing density. The 650 V family is the highest voltage GaN power device suite today for high-rel military, avionics, and space applications, particularly power supply, motor control, half bridge topologies, and solar and wind power.



Ruggedized 100V HEMT Adds to e2v HiRel’s GaN Power HEMT Family – This new product, TDG100E90, joins the recently announced 650V, 60A TDG650E60, and is available to provide a lower step-down voltage in high-reliability power circuitry. Compared to Silicon MOSFET devices, the GaN-based TDG100E90 HEMT significantly reduces losses and EMI, due to no reverse recovery characteristics. To reduce drain-source on-resistance (RDS(on)) or increase the load current, the TDG100E90 can easily support parallel driving configuration. The use of high-performance GaNPX® packaging allows very high-frequency switching, extremely low inductance, and excellent thermal characteristics, enabling customers to significantly reduce the size and weight of power electronics. Download the TDG100E90BEP​ Data Sheet >

 

Device
​D/S Status Package
Voltage Current Rds (ON) Dims, Spi​ce
Model​
Description
TDG100E90BEP Active GaNPX™ 100V 90A 7 mOhm
(typ)
7.6 x 4.6
x 0.5mm
Ruggedized Plastic

Bottom-Side Cooled​Enhancement Mode GaN FET in GaNPX® Packaging, 100V, 90A

TDG100E90TEP Active GaNPX™ 100V 90A 7 mOhm
(typ)
7.0 x 4.0
x 0.54​mm
Ruggedized Plastic
Top-Side Cooled
Enhancement Mode
GaN FET in GaNPX® Packaging, 100V, 90A
TDG650E60BEP ​​
Active GaNPX™ 650V 60A 25 mOhm
(typ)
11.0 x 9.0
x 0.54mm
​​​
Ruggedized Plastic
Bottom-Side Cooled 
Enhancement Mode
GaN FET in GaNPX® Packaging, 650V, 60A
TDG650E60TEP ​​​
Active GaNPX™ 650V 60A 25 mOhm
(typ)
9.0 x 7.6
x 0.54mm​
Ruggedized Plastic
Top-Side Cooled
Enhancement Mode
GaN FET in GaNPX® Packaging, 650V, 60A

​TDG650E601TSP
NEW


​Active

​GaNPX™

​650V

​60A

​25 mOhm
(typ)

​9.0 x 7.6
x 0.54mm

​Ruggedized Plastic
Top-Side Cooled
Enhancement Mode
GaN FET in GaNPX® Packaging, 650V, 60A
Space Screened

TDG650E602TSP
NEW

Active
GaNPX™
​650V
​60A
25 mOhm
(typ)
9.0 x 7.6
x 0.54mm
Ruggedized Plastic
Top-Side Cooled
Enhancement Mode
GaN FET in GaNPX® Packaging, 650V, 60A
Space Screened
TDG650E30BEP Active GaNPX™ 650V 30A 50 mOhm
(typ)
7.1 x 8.5
x 0.56mm
Ruggedized Plastic
Bottom-Side Cooled​
Enhancement Mode
GaN FET in GaNPX® Packaging, 650V, 30A
TDG650E15BEP Active GaNPX™ 650V 15A 100 mOhm
(typ)
5.0 x 6.6
x 0.51mm
Ruggedized Plastic
Bottom-Side Cooled
Enhancement Mode
GaN FET in GaNPX® Packaging, 650V, 15A​