​Military & Space


 

GaN Drivers

The evolution of new technologies, such as wide-bandgap semiconductors (WBGs) is paving the way for smaller, faster, and more efficient power management solutions. GaN transistors are enabling applications that favor solutions offering reduced physical size, weight, and cost.

One of the distinguishing features of GaN transistors is their ability to operate at much higher frequencies than silicon metal-oxide semiconductor field-effect transistors (Si MOSFETs), due to their smaller capacitance and ​lower on-resistance. Higher switching frequency offers the benefits of smaller magnetics. Increasing the switching frequency requires a driver with lower propagation delay, accurate matching between channels, and minimum parasitic inductance.

The Teledyne GaN drivers boasts the industry’s fastest rise times and a low minimum pulse width. These high-speed drivers enable design engineers to extract the full performance and switching speed advantages from GaN transistors.


 What's New

Teledyne e2v HiRel Announces New 100 V High-Speed 20 MHz FET and GaN Transistor Driver Flip Chip Die

MILPITAS, CA – March 3rd, 2022 Teledyne e2v HiRel announces the new TD​99102 UltraCMOS® High-speed FET and GaN transistor driver offering very high switching speed of 20 MHz. The new flip-chip part is ideal for driving Teledyne HiRel's 100 V high reliability GaN HEMT devices in DC-DC, AC-DC converters, orbital Point-of-Load (POL) modules and space motor drives.​  
Read the press release.


Ruggedized, High Reliability Isolated Gate Drivers for 650V GaN Power HEMTs​ ​


The TDGD271 and TDGD274  isolators are ideal for driving GaN power parts used in a wide variety of power supply and motor control applications. The TDGD27x isolated gate drivers utilize silicon isolation technology, supporting up to 2.5 kVRMS. This technology enables industry leading common-mode transient immunity (CMTI), tight timing specifications, reduced variation with temperature and age, better part-to-part matching, and extremely high reliability.
Download the TDGD27x Data Sheet >


Teledyne e2v HiRel and Silicon Labs Announce Partnership

Teledyne e2v HiRel and Silicon Labs (SL) are partnering to  offer SL’s high reliability isolation technology as part of Teledyne’s new family of gate drivers, with an initial focus on satcom power systems.  The Teledyne product line is ideal for GaN applications due to their faster switch rates and provide options for either a single driver or a combination of two 4 A isolated drivers in a single IC package for isolated gate drive applications.  Read the press release.​​​

 GaN Driver Products

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​​Ordering Part Number

​Inputs

​Max Voltage (V)

​Driver Configuration

​Output Under Voltage Lock Out (V)

​Dead-Time Adjustable Range (ns)

​Speed (MHz)

​Package Type

​Isolation
(kV RMS)

​Status

TDGD271
​VI
​650
​Single
​3
​N/A
​1
​SOIC-8 NB
​2.5
​Released
​TDGD274
​PWM
​650
​HS/ LS
​3
​10-200
​1
​SOIC-16 NB
​2.5
​Released
TD99102​
NEW
​PWM
​100
​HS/ LS
​3.6
​1.8 - 23.5
​20
​Die
​Non-Isolated
​Released